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ZVN4424Z
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP
MAX. UNIT
CONDITIONS.
Drain-Source Breakdown
BV DSS
240
V
I D =1mA, V GS =0V
Voltage
Gate-Source Threshold
V GS(th)
0.8
1.3
1.8
V
I D =1mA, V DS = V GS
Voltage
Gate-Body Leakage
I GSS
100
nA
V GS = ± 40V, V DS =0V
On State Drain-Current
Zero Gate Voltage Drain
Current
I D(on)
I DSS
0.8
1.4
10
100
A
μ A
μ A
V DS =10V, V GS =10V
V DS =240 V, V GS =0V
V DS =190 V, V GS =0V, T=125°C
Static Drain-Source
On-State Resistance
R DS(on)
4
4.3
5.5
6
?
?
V GS =10V,I D =500mA*
V GS =2.5V,I D =100mA*
Forward
Transconductance (1) (2)
Input Capacitance (2)
g fs
C iss
0.4
0.75
110
200
S
pF
V DS =10V,I D =0.5A
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
C oss
C rss
t d(on)
t r
t d(off)
t f
15
3.5
2.5
5
40
16
25
15
5
8
60
25
pF
pF
ns
ns
ns
ns
V DS =25V, V GS =0V, f=1MHz
V DD ≈ 50V, I D =0.25A, V GEN =10V
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2%
(2) Sample test.
(3) Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
TYPICAL CHARACTERISTICS
1
0.1
DC
1s
0.01
100ms
10ms
1ms
100 μ s
0.001
1
10
100
1k
V DS - Drain Source Voltage (V)
Safe Operating Area
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